| 摘要 |
PURPOSE:To prevent the diffusion of impurities to a heat generating resistor, by a method wherein the material quality and thickness of the diffusion preventing layer provided between a glass layer and the heat generating resistor are selected in a proper range so as to have not only a resistance value sufficiently large as compared with that of the heat generating resistor between electrode layers but also an extremely low resistance value between the heat generating resistor and the electrode layers. CONSTITUTION:The diffusion preventing layer 10 having conductivity provided between a glass layer 2 and a heat generating resistor 4 is constituted of, for example, a membrane of tantalum oxide. The resistance value r1 between the electrode layers 7, 8 in the diffusion preventing layer 10 in the longitudinal direction thereof comes to rl/R>50 as compared with the resistance value R of the heat generating resistor 4, and the material quality and thickness of the diffusion preventing layer 10 are selected so as to set the resistance value rd between the heat generating resistor 4 and the electrode layers 7, 8 in the thickness direction to rd/R<1/20. Since the diffusion preventing layer 10 can be regarded as an insulator in the longitudinal direction between the electrode layers 7, 8 and can be regarded as a conductor in the thickness direction between the heat generating resistor 4 and the electrode layers 7, 8, the diffusion of impurities to the heat generating resistor 4 can be prevented without exerting effect on the driving of the heat generating resistor 4. |
