发明名称 |
Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive current |
摘要 |
A method (and semiconductor device) of fabricating a TFET device provides a source region having at least a portion thereof positioned underneath a gate dielectric. In one embodiment, the TFET includes an N+ drain region and a P+ source region in a silicon substrate, where the N+ drain region is silicon and the P+ source region is silicon germanium (SiGe). The source region includes a first region of a first type (e.g., P+ SiGe) and a second region of a second type (undoped SiGe), where at least a portion of the source region is positioned below the gate dielectric. This structure decreases the tunneling barrier width and increases drive current (Id).
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申请公布号 |
US8368127(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US20090587511 |
申请日期 |
2009.10.08 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE., LTD.;ZHU MING;TAN SHYUE SENG;TOH ENG HUAT;QUEK ELGIN |
发明人 |
ZHU MING;TAN SHYUE SENG;TOH ENG HUAT;QUEK ELGIN |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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