发明名称 |
Method of manufacturing magnetoresistive device and apparatus for manufacturing the same |
摘要 |
A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device.
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申请公布号 |
US8367156(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US201113177237 |
申请日期 |
2011.07.06 |
申请人 |
CANON ANELVA CORPORATION;NAGAMINE YOSHINORI;TSUNEKAWA KOJI;DJAYAPRAWIRA DAVID DJULIANTO;MAEHARA HIROKI |
发明人 |
NAGAMINE YOSHINORI;TSUNEKAWA KOJI;DJAYAPRAWIRA DAVID DJULIANTO;MAEHARA HIROKI |
分类号 |
B05D5/12 |
主分类号 |
B05D5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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