| 摘要 |
PURPOSE: A chemical amplification resist composition is provided to form a pattern which simultaneously satisfies high sensitivity, high resolution, and sufficient dry etching resistance. CONSTITUTION: A chemical amplification resist composition comprises a polymer compound which has a group formed by substituting a hydrogen atom of a hydroxyl group in a phenolic hydroxyl group and a phenolic hydroxyl group by a substituent, and satisfies the followings. The dispersity is 1.2 or less; the weight average molecular weight is 2,000-6,500; and the glass transition temperature(Tg) is 140 deg. C or more. The polymer compound comprises 10-90 mol% of a repeating unit indicated in chemical formula II based on the total repeating units of the polymer compound. In the chemical formula II, R2 is a hydrogen atom, a methyl group which can have a substituent, or a halogen atom; Ar2 is an aromatic ring group; and m is an integer from 1 or more. |
