发明名称 |
Semiconductor structure and method for manufacturing the same |
摘要 |
The present application discloses a semiconductor structure and a method for manufacturing the same. The semiconductor structure according to the present invention adjusts a threshold voltage with a common contact, which has a portion outside the source or drain region extending to the back-gate region and provides an electrical contact of the source or drain region and the back-gate region, which leads to a simple manufacturing process, an increased integration level and a lowered manufacture cost. Moreover, the asymmetric design of the back-gate structure further increases the threshold voltage and improves the performance of the device.
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申请公布号 |
US8367490(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US201113144182 |
申请日期 |
2011.03.04 |
申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES;ZHU HUILONG;LIANG QINGQING;YIN HAIZHOU;LUO ZHIJIONG |
发明人 |
ZHU HUILONG;LIANG QINGQING;YIN HAIZHOU;LUO ZHIJIONG |
分类号 |
H01L27/12;H01L21/84 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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