发明名称 |
Vertical hall sensor and method for manufacturing a vertical hall sensor |
摘要 |
A well (2) doped for a conductivity type and provided as the sensor region is formed in a substrate (1) made of semiconductor material. Contact regions (4), arranged spaced apart from one another and doped for the same conductivity type as the well (2), are formed in a cover layer (3) that delimits the region with the conductivity type of the well. The contact areas (4) are electroconductively connected to the well (2) and provided for terminal contacts (6).
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申请公布号 |
US8368390(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US20100869651 |
申请日期 |
2010.08.26 |
申请人 |
AUSTRIAMICROSYSTEMS AG;SCHREMS MARTIN;CARNIELLO SARA |
发明人 |
SCHREMS MARTIN;CARNIELLO SARA |
分类号 |
G01B7/14 |
主分类号 |
G01B7/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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