发明名称 |
Self-aligned patterned etch stop layers for semiconductor devices |
摘要 |
A method of forming a semiconductor device includes patterning a photoresist layer formed over a homogeneous semiconductor device layer to be etched; subjecting the semiconductor device to an implant process that selectively implants a sacrificial etch stop layer that is self-aligned in accordance with locations of features to be etched within the homogeneous semiconductor device layer, and at a desired depth for the features to be etched; etching a feature pattern defined by the patterned photoresist layer into the homogenous semiconductor device layer, stopping on the implanted sacrificial etch stop layer; and removing remaining portion of the implanted sacrificial etch stop layer prior to filling the etched feature pattern with a fill material.
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申请公布号 |
US8367544(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US20090582137 |
申请日期 |
2009.10.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHENG KANGGUO;CLEVENGER LAWRENCE A.;FALTERMEIER JOHNATHAN E.;GRUNOW STEPHAN;KUMAR KAUSHIK A.;PETRARCA KEVIN S. |
发明人 |
CHENG KANGGUO;CLEVENGER LAWRENCE A.;FALTERMEIER JOHNATHAN E.;GRUNOW STEPHAN;KUMAR KAUSHIK A.;PETRARCA KEVIN S. |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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地址 |
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