发明名称 |
Stacked memory module and system |
摘要 |
A three dimensional memory module and system are formed with at least one slave chip stacked over a master chip. Through semiconductor vias (TSVs) are formed through at least one of the master and slave chips. The master chip includes a memory core for increased capacity of the memory module/system. In addition, capacity organizations of the three dimensional memory module/system resulting in efficient wiring is disclosed for forming multiple memory banks, multiple bank groups, and/or multiple ranks of the three dimensional memory module/system.
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申请公布号 |
US8369123(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US201213535363 |
申请日期 |
2012.06.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;KANG UK-SONG;CHUNG HOE-JU;CHOI JANG-SEOK;LEE HOON |
发明人 |
KANG UK-SONG;CHUNG HOE-JU;CHOI JANG-SEOK;LEE HOON |
分类号 |
G11C5/02 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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