发明名称 Pseudo dual-port SRAM and a shared memory switch using multiple memory banks and a sideband memory
摘要 A memory is described which includes a main memory array made up of multiple single-ported memory banks connected by parallel read and write buses, and a sideband memory equivalent to a single dual-ported memory bank. Control logic and tags state facilitates a pattern of access to the main memory and the sideband memory such that the memory performs like a fully provisioned dual-ported memory capable of reading and writing any two arbitrary addresses on the same cycle.
申请公布号 US8370557(B2) 申请公布日期 2013.02.05
申请号 US20080340022 申请日期 2008.12.19
申请人 INTEL CORPORATION;DAMA JONATHAN;LINES ANDREW 发明人 DAMA JONATHAN;LINES ANDREW
分类号 G06F13/00;G06F12/00;G11C11/413 主分类号 G06F13/00
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