发明名称 |
Memory word line boost using thin dielectric capacitor |
摘要 |
A memory includes a word line and a word line boost circuit. The word line boost circuit includes a capacitor having a capacitor dielectric thickness, and a transmission gate coupled to the word line and the capacitor. The transmission gate has a gate-dielectric thickness that is greater than the capacitor dielectric thickness. The word line boost circuit is configured to supply a high voltage that is higher than a power supply voltage to the word line during an operation of the memory by utilizing the capacitor.
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申请公布号 |
US8369180(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US20100949261 |
申请日期 |
2010.11.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;YU HUNG-CHANG;CHIH YUE-DER |
发明人 |
YU HUNG-CHANG;CHIH YUE-DER |
分类号 |
G11C8/00 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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