发明名称 |
Metal chalcogenide aqueous precursors and processes to form metal chalcogenide films |
摘要 |
Metal chalcogenide precursor solutions are described that comprise an aqueous solvent, dissolved metal formate salts and a chalcogenide source composition. The chalcogenide source compositions can be organic compounds lacking a carbon-carbon bond. The precursors are designed to form a desired metal chalcogenide upon thermal processing into films with very low levels of contamination. Potentially contaminating elements in the precursors form gaseous or vapor by-products that escape from the vicinity of the product metal chalcogenide films.
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申请公布号 |
US8366967(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US20100709834 |
申请日期 |
2010.02.22 |
申请人 |
INPRIA CORPORATION;KESZLER DOUGLAS A.;CLARK BEJAMIN L. |
发明人 |
KESZLER DOUGLAS A.;CLARK BEJAMIN L. |
分类号 |
H01B1/00 |
主分类号 |
H01B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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