发明名称 |
Method of fabricating polycrystalline silicon thin film |
摘要 |
A method of fabricating a polycrystalline silicon thin that includes a metal layer forming operation of forming a metal layer on an insulating substrate, a first silicon layer forming operation of stacking a silicon layer on the metal layer formed in the metal layer forming operation, a first annealing operation of forming a silicide layer using by moving catalyst metal atoms from the metal layer to the silicon layer using an annealing process, a second silicon layer forming operation of stacking an amorphous silicon layer on the silicide layer, and a crystallization operation of crystallizing the amorphous silicon layer into crystalline silicon through the medium of particles of the silicide layer.
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申请公布号 |
US8367527(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US201113301368 |
申请日期 |
2011.11.21 |
申请人 |
NOKORD CO., LTD.;LEE WON TAE;CHO HAN SICK;KIM HYUNG SU |
发明人 |
LEE WON TAE;CHO HAN SICK;KIM HYUNG SU |
分类号 |
H01L21/20;C23C16/24;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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