发明名称 |
Method of manufacturing dual gate semiconductor device |
摘要 |
The method involves providing a semiconductor substrate comprising first and second regions in which different conductive metal-oxide semiconductor (MOS) transistors are to be formed. A gate dielectric layer above the semiconductor substrate sequentially forming a first metallic conductive layer and a second metallic conductive layer on and above the gate dielectric layer; covering the second region with a mask, and performing ion plantation of a first material into the first metallic conductive layer of the first region. Removing the second metallic conductive layer of the first region and forming a first gate electrode of the first region and a second gate electrode of the second region by patterning the gate dielectric layer and the first metallic conductive layer of the first region, and the gate dielectric layer, the first metallic conductive layer, and the second metallic conductive layer of the second region. The first and second regions of the semiconductor substrate having different work functions because the gate electrodes of the first and second regions have different thicknesses and at least one of the first and second gate electrodes include impurities.
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申请公布号 |
US8367502(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US20090654337 |
申请日期 |
2009.12.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;PARK HONG-BAE;CHO HAG-JU;HONG SUG-HUN;HYUN SANG-JIN;NAH HOON-JOO;HONG HYUNG-SEOK |
发明人 |
PARK HONG-BAE;CHO HAG-JU;HONG SUG-HUN;HYUN SANG-JIN;NAH HOON-JOO;HONG HYUNG-SEOK |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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