发明名称 Three-dimensional integrated circuit structure
摘要 A method of forming a semiconductor structure includes coupling a semiconductor structure to an interconnect region through a bonding region. The interconnect region includes a conductive line in communication with the bonding region. The bonding region includes a metal layer which covers the interconnect region. The semiconductor structure is processed to form a vertically oriented semiconductor device.
申请公布号 US8367524(B2) 申请公布日期 2013.02.05
申请号 US20100881961 申请日期 2010.09.14
申请人 LEE SANG-YUN 发明人 LEE SANG-YUN
分类号 H01L21/00;H01L21/331 主分类号 H01L21/00
代理机构 代理人
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