SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PURPOSE: A semiconductor IC(Integrated Circuit) is provided to prevent a PN junction portion from being broken which is formed between a guard ring region and a protecting element. CONSTITUTION: A first impurity region(N) has a rectangular structure. A guard ring(Grd Rng) has a ring structure surrounding the first impurity region. A weak spot(Wk SP) is formed in the short side of the first impurity region. A gate electrode(G) of a MOS transistor is formed between first impurity regions in a longitudinal direction. Both sides of the multiple first impurity regions function as a source(S) and a drain(D) of the MOS transistor.