3-DIMENSIONAL ALIGNED NANOSTRUCTURE PREPARED BY BOTH IMPRINT LITHOGRAPHY AND LIFT-OFF PROCESSES, AND METHOD OF MANUFACTURING FOR THE SAME
摘要
PURPOSE: A 3-dimensional aligned nanostructure prepared by both imprint lithography and lift-off processes is provided to have a uniform size, various shape and constant arrangement by controlling the ratio of dry etching. CONSTITUTION: A manufacturing method a 3-dimensional aligned nanostructure comprises: a step of forming a polymer layer(102) on a substrate(101); a step of forming a photosensitive metal-organic material precursor layer on the upper part of the polymer layer; a step of preparing an imprint stamp; a step of pressurizing the photosensitive metal-organic precursor layer by the imprint stamp; and a step of forming a metal oxide thin-film pattern(105)by hardening the metal-organic precursor layer; a step of removing the imprint stamp from the metal oxide thin film pattern; a step of forming an undercut(106) by etching the polymer layer; a step of forming a metal oxide film(107); and a step of lift-offing the metal oxide thin film pattern and etching the polymer layer with an under cut.
申请公布号
KR20130012291(A)
申请公布日期
2013.02.04
申请号
KR20110073391
申请日期
2011.07.25
申请人
KOREA ADVANCED NANO FAB CENTER
发明人
PARK, HYEONG HO;HWANG, SEON YONG;KANG, HO KWAN;YOON, HONG MIN;SHIN, HYUN BEOM;SUNG, HO KUN;LEE, JEONG GUN;KO, CHUL GI