NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device suitable for high integration.

SOLUTION: A nonvolatile semiconductor memory device has first to third fin-type stacked structures Fin1 to Fin3. The first to third fin-type stacked structures Fin1 to Fin3 each include first and second semiconductor layers Sm1 and Sm2 stacked in a first direction. First and second assist-gate electrodes AG1 and AG2 are disposed side by side in a third direction and divided to each other on a surface of the third fin-type stacked structure Fin3 located in the first direction. A first assist-gate transistor AGT1 is formed in the first and third fin-type stacked structures Fin1 and Fin3 and a second assist-gate transistor AGT2 is formed in the second and third fin-type stacked structures Fin2 and Fin3.

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