发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which can improve access performance. <P>SOLUTION: A nonvolatile semiconductor memory outputs a first parity flag corresponding to error-corrected read data stored in a data buffer from a second input/output pin in synchronization with the error-corrected read data outputted from a first input/output pin. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013025835(A) 申请公布日期 2013.02.04
申请号 JP20110158093 申请日期 2011.07.19
申请人 TOSHIBA CORP 发明人 TAKIZAWA RYOSUKE
分类号 G11C29/42;G11C11/15;G11C11/22;H01L21/8246;H01L27/10;H01L27/105 主分类号 G11C29/42
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