发明名称 HIGH-FREQUENCY SWITCH AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To improve the frequency characteristics and the assemblability. <P>SOLUTION: In an input substrate 2, a part of a ground surface is extracted to a front surface via a via hole 11, and the extracted part of the ground surface and a transmission line 2a are connected with each other by a film resistor 12. In two sets of output substrates 3 and 4, electrodes 13 and 15 are formed at positions separated from transmission lines 3a and 4a by a predetermined distance respectively. The electrode 13 and the transmission line 3a are connected with each other by a film resistor 14, and the electrode 15 and the transmission line 4a are connected with each other by a film resistor 16. Two sets of capacitors 5 and 6 are electrically connected to the respective electrodes 13 and 15 of the two sets of output substrates 3 and 4, and connected to a bias terminal. A PIN diode switch 7 selectively switches a transmission path between the input substrate 2 and the two sets of output substrates 3 and 4 by application of positive and negative voltages to the bias terminal. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013026788(A) 申请公布日期 2013.02.04
申请号 JP20110159129 申请日期 2011.07.20
申请人 ANRITSU CORP 发明人 MATSUDA SHUICHI;YASUDA YOSHIAKI
分类号 H01P1/15 主分类号 H01P1/15
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