| 摘要 |
PURPOSE: A semiconductor substrate manufacturing method and a light emitting device manufacturing method are provided to easily remove the substrate by growing the hollow by forming the hollow between the growth substrate and the semiconductor layer. CONSTITUTION: A first semiconductor layer(102) is formed on a substrate(101). A metallic material layer(103) is formed on the first semiconductor layer into the pattern layout. A second semiconductor layer(104) is formed on the first semiconductor layer and the metallic material layer. A hollow(102a) is formed on a portion of first semiconductor layer being lower than the metallic material layer. |
