| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vapor phase growth device capable of adjusting the pressure stably while suppressing power consumption of a vacuum pump, and to provide a vapor phase growth method. <P>SOLUTION: The vapor phase growth device includes a reaction chamber into which a wafer is introduced, a gas supply unit for supplying process gas to the reaction chamber, a support unit on which a wafer is mounted, a rotary drive unit for rotating a wafer, a heater for heating the wafer to a predetermined temperature, a valve connected with the reaction chamber and controlling the flow rate of exhaust gas, a pump provided on the downstream side of the valve and discharging the exhaust gas, a first pressure gauge which detects a first pressure, i.e., the pressure of the reaction chamber, a second pressure gauge which detects a second pressure, i.e., the pressure between the valve and the pump, a first pressure control unit which controls the valve based on the first pressure, and a second pressure control unit which controls the amount of pump operation based on the first pressure and the second pressure. <P>COPYRIGHT: (C)2013,JPO&INPIT |
