| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem of a Zener diode that as an LSI incorporated in a mobile phone undergoes a trend toward low voltage design due to its increased multifunctionality and surge protection of the LSI has therefore become important, many surge protection elements are used in the mobile phone because surges penetrate from various interfaces, but because the signal frequency of the mobile phone is a high frequency, a Zener diode used in it is required of ultralow capacitance characteristic, and because the Zener diode is a surge protective element, surge strength is important too, and that since inter-terminal capacitance and surge strength have trade-off relationship, it is difficult to improve both at the same time, so presented here is the one which was invented in the course of development of a surge protective Zener diode which can secure a certain degree of surge strength and also can realize ultralow capacitance. <P>SOLUTION: A bidirectional Zener diode of lateral structure has a pair of PN junctions provided on the surface of a high resistance epitaxial layer and leads a pair of electrodes out of the top face of a chip. <P>COPYRIGHT: (C)2013,JPO&INPIT |
