SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to reduce the influence of polarization by controlling the content of In and the shape of a bandgap of a quantum barrier layer. CONSTITUTION: An active layer(103) is arranged between a first conductive semiconductor layer and a second conductive semiconductor layer. A quantum barrier layer(103b) and a quantum well layer(103a) are alternatively arranged on the active layer. The quantum barrier layer includes a first region and a second region. The first region is contacted with the second region.