| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an n-type diffusion layer and a manufacturing method of a solar cell element capable of manufacturing an n-type diffusion layer with less residue derived from a dispersion medium in a specific part of a silicon substrate without forming an unnecessary n-type diffusion layer in a manufacturing step of a solar cell element using the silicon substrate. <P>SOLUTION: An n-type diffusion layer 12 is formed on a silicon substrate using an n-type diffusion layer formation composition 11 containing a glass powder including a donor element and a dispersion medium. Then the silicon substrate on which the n-type silicon diffusion layer is formed is cleaned ultrasonically. <P>COPYRIGHT: (C)2013,JPO&INPIT |
