| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the occurrence of dendrite between electrode pads. <P>SOLUTION: A semiconductor device has a first electrode pad 1a, a second electrode pad 1b, and a metal-film pattern 3 disposed between the first electrode pad 1a and the second electrode pad 1b. (1) The metal-film pattern 3 is electrically connected to the first electrode pad 1a or the same potential as the first electrode pad 1a is applied to the metal-film pattern 3, and (2) the metal-film pattern 3 is covered with an insulating film (a protective insulating film 2). <P>COPYRIGHT: (C)2013,JPO&INPIT |
