| 发明名称 |
THIN-FILM TRANSISTOR AND ELECTRONIC DEVICE USING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a π-electron conjugated compound precursor and a transistor structure which are for manufacturing a thin-film transistor having excellent electrical characteristics and atmospheric stability and an electronic device using the same by a wet process. <P>SOLUTION: The top-gate thin-film transistor uses at least an organic film obtained by a process represented by general formula (I). <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013026591(A) |
申请公布日期 |
2013.02.04 |
| 申请号 |
JP20110162935 |
申请日期 |
2011.07.26 |
| 申请人 |
RICOH CO LTD |
发明人 |
MORI MASATAKA;YAMAMOTO SATOSHI;KOSAKA TOSHIYA;TANO TAKANORI;KATO TAKUJI;SHINODA MASAHITO;GOTO DAISUKE;MATSUMOTO SHINJI;YUTANI KEIICHIRO;NAKANOYA HAJIME |
| 分类号 |
H01L51/30;H01L21/336;H01L29/786;H01L51/05;H01L51/40 |
主分类号 |
H01L51/30 |
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