| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for processing a semiconductor crystal body in which it is possible to process the crystal body at a temperature lower than before and light transmittance of the processed semiconductor crystal body is not deteriorated. <P>SOLUTION: A method for processing a semiconductor crystal body includes the steps of: preparing a semiconductor crystal body 1; sandwiching the semiconductor crystal body 1 by a pair of pressure fixtures 2 and 3 (an upper punch 2 and a lower punch 3) composed of a material using a conductive material as a main component; increasing a temperature of the semiconductor crystal body by self-heating to a target temperature equal to or greater than a temperature causing plastic deformation by pressurization and less than its melting point, by applying a pulse-like current to between the pair of pressure fixtures 2 and 3; molding the semiconductor crystal body into a target shape by the plastic deformation by applying pressure to between the pair of pressure fixtures 2 and 3 while maintaining the semiconductor crystal body at the target temperature by continuously applying the pulse-like current to between the pair of pressure fixtures 2 and 3; and annealing the semiconductor crystal body molded in the target shape. <P>COPYRIGHT: (C)2013,JPO&INPIT |
