| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with high productivity and high reliability. <P>SOLUTION: A method of manufacturing a semiconductor device according to an embodiment comprises the steps of: forming a film containing an impurity element, which is added to a semiconductor layer, on the semiconductor layer; and irradiating the film with a first gas, which is in a plasma state containing a first rare gas atom, and a second gas, which is in a plasma state containing a second rare gas atom having an atomic mass smaller than that of the first rare gas atom or hydrogen (H). <P>COPYRIGHT: (C)2013,JPO&INPIT |
