发明名称 |
THIN FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY HAVING THE SAME, AND FABRICATION METHOD OF THE THIN FILM TRANSISTOR |
摘要 |
PURPOSE: A thin film transistor substrate, a liquid crystal display having the same, and a method for fabricating the thin film transistor substrate are provided to reduce parasitic capacitance and kick-back voltage between a gate electrode of the thin film transistor and a source electrode. CONSTITUTION: A gate electrode(GE) is formed on one side of an insulating substrate(IS1). A gate insulating layer(GI) covers the gate electrode. A semiconductor layer(SM) is formed on the gate insulating layer. A source electrode(SE) is formed on the semiconductor layer. A drain electrode(DE) is separated from the source electrode. |
申请公布号 |
KR20130012450(A) |
申请公布日期 |
2013.02.04 |
申请号 |
KR20110073671 |
申请日期 |
2011.07.25 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
KANG, SU HYOUNG;KHANG, YOON HO;CHANG, CHONG SUP;PARK, SANG HO;LEE, JUNG KYU |
分类号 |
H01L29/786;G02F1/136;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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