发明名称 THIN FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY HAVING THE SAME, AND FABRICATION METHOD OF THE THIN FILM TRANSISTOR
摘要 PURPOSE: A thin film transistor substrate, a liquid crystal display having the same, and a method for fabricating the thin film transistor substrate are provided to reduce parasitic capacitance and kick-back voltage between a gate electrode of the thin film transistor and a source electrode. CONSTITUTION: A gate electrode(GE) is formed on one side of an insulating substrate(IS1). A gate insulating layer(GI) covers the gate electrode. A semiconductor layer(SM) is formed on the gate insulating layer. A source electrode(SE) is formed on the semiconductor layer. A drain electrode(DE) is separated from the source electrode.
申请公布号 KR20130012450(A) 申请公布日期 2013.02.04
申请号 KR20110073671 申请日期 2011.07.25
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 KANG, SU HYOUNG;KHANG, YOON HO;CHANG, CHONG SUP;PARK, SANG HO;LEE, JUNG KYU
分类号 H01L29/786;G02F1/136;H01L21/336 主分类号 H01L29/786
代理机构 代理人
主权项
地址