| 摘要 |
<P>PROBLEM TO BE SOLVED: To selectively remove an aluminum oxide film provided between a plurality of first wirings in a second region while preventing an oxidant from entering a gate insulation film in a first region. <P>SOLUTION: An insulation film is so formed as to cover a side wall of a first laminate in a first region and to cover a plurality of first wirings in a second region, and the insulation film is used as a mask to perform first ion implantation into the first region. A second insulation film whose main subject is aluminium oxide is so formed as to cover the side wall of the first laminate in the first region and to fill space between the plurality of first wirings in the second region. After that, the second insulation film is used as a mask to perform second ion implantation in the first region. The second insulation film is selectively removed from the first insulation film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
