| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor crystal processing method that enables processing at a temperature lower than ever before and achieves acquisition of a semiconductor crystal with light transmissivity including wavelength dependence. <P>SOLUTION: A semiconductor crystal processing method includes the steps of: preparing a semiconductor crystal 1; placing the semiconductor crystal 1 between a pair of pressure tools 2 and 3 (upper punch 2 and lower punch 3) that are individually made of a material mainly including a conductive material; using self-heating due to application of pulsing current between the pair of pressure tools to raise a temperature of the semiconductor crystal 1 to a target temperature that is equal to or higher than a temperature for plastic deformation due to pressurization and is less than a melting point; and keeping the application of the pulsing current between the pair of pressure tools 2 and 3, applying pressure between the pair of pressure tools 2 and 3 while keeping the semiconductor crystal at the target temperature, and forming the semiconductor crystal into a target shape through the plastic deformation. The maximum pressure applied between the pair of pressure tools is set at 30 MPa or more. <P>COPYRIGHT: (C)2013,JPO&INPIT |
