| 摘要 |
<P>PROBLEM TO BE SOLVED: To omit the ion implantation step for introducing the impurities after epitaxial growth, and to prevent variation in the transistor characteristics due to introduction of the impurities up to the pillar, even if the thickness of an epitaxial growth layer varies. <P>SOLUTION: Following formation of a silicon pillar on the principal surface of a substrate, a first diffusion layer of a conductivity type opposite from that of the silicon pillar is formed in the substrate under the silicon pillar. A gate electrode is formed on the side face of the silicon pillar with a gate insulating film interposed therebetween. Subsequently, silicon containing impurities is grown epitaxially on the top face of the silicon pillar, thus forming a second diffusion layer of a conductivity type opposite from that of the silicon pillar. <P>COPYRIGHT: (C)2013,JPO&INPIT |
