| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a MISFET having a metal gate electrode capable of obtaining desired reliability and characteristics while reducing the number of processes in gate last process. <P>SOLUTION: The MISFET has a gate insulation film 112 and a protection film 113, which are formed in order over at least a bottom surface of the respective gate grooves. Over the protection film 113 in one gate groove, a first metal-containing film 114a and a second metal-containing film 114b are formed in order; and over the protection film 113 in the other gate groove, a second metal-containing film 114b is formed. The thickness of the protection film 113 in the other gate groove is smaller than that of the protection film 113 in the one gate groove. <P>COPYRIGHT: (C)2013,JPO&INPIT |
