| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that allows reducing the resistance of a control gate and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor memory device includes: a substrate containing silicon; and a plurality of memory cells that are formed on the substrate and have a floating gate, an inter-gate insulating film formed on the floating gate, and a control gate formed on the inter-gate insulating film. The control gate has an upper layer part formed at the top of the control gate and containing nickel silicide, a lower layer part formed under the upper layer part and containing polysilicon, and a segregation part formed between the upper layer part and the lower layer part and in which at least any of arsenic and antimony is segregated. <P>COPYRIGHT: (C)2013,JPO&INPIT |
