| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the contact resistance between a p-contact layer and an ITO electrode in a group-III nitride semiconductor light-emitting device. <P>SOLUTION: A group-III nitride semiconductor light-emitting device has a dot-shaped structure 16 composed of AlGaN on a p-contact layer 15, and an ITO electrode 17 is formed on the p-contact layer 15 and the dot-shaped structure 16. The dot-shaped structure 16 has such a structure that dot-shaped AlGaN is scattered on a surface of the p-contact layer 15. Since Al in the dot-shaped structure 16 combines with oxygen, oxygen increases at the interface between the p-contact layer 15 and the ITO electrode 17. As a result, the contact resistance between the p-contact layer 15 and the ITO electrode 17 is reduced. <P>COPYRIGHT: (C)2013,JPO&INPIT |
