MANUFACTURING METHOD OF P-TYPE DIFFUSION LAYER, MANUFACTURING METHOD OF SOLAR CELL ELEMENT, AND SOLAR CELL ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a p-type diffusion layer capable of forming regions having different acceptor concentrations at a time in a relatively simple step.

SOLUTION: A manufacturing method of a p-type diffusion layer comprises the steps of: forming a silicon oxide film having a patterned average thickness of 0.01 μm or higher and 2 μm or lower on a silicon substrate; forming a composition layer including an acceptor element on the silicon substrate on which the silicon oxide film was formed; performing thermal diffusion treatment after forming the composition layer; and removing the silicon oxide film and the composition layer after the thermal diffusion treatment.

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