MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of improving a semiconductor device yield by suppressing attachment of a residue caused by a carbon component to a conductive film after forming the conductive film in holes formed in a sacrifice insulating film and then removing the sacrifice insulating film.

SOLUTION: A manufacturing method of a semiconductor device comprises the steps of: forming a sacrifice insulating film on a surface of a semiconductor substrate in a film formation method which uses a material not containing a carbon component; forming holes penetrating the sacrifice insulating film; forming a conductor film covering sidewall parts of the holes on the sacrifice insulating film; and removing the sacrifice insulating film.

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