| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that allows improvement of yield. <P>SOLUTION: According to an embodiment, a method of manufacturing a semiconductor device is provided. The method of manufacturing a semiconductor device includes an insulating-film formation step, a peripheral-edge exposure step, and a conductor-film formation step. In the insulating-film formation step, an insulating film is formed on a semiconductor wafer. In the peripheral-edge exposure step, the peripheral edge of the semiconductor wafer is exposed after the formation of the insulating film. In the conductor-film formation step, a conductor film is formed on the exposed peripheral edge of the semiconductor wafer and the insulating film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
