| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plane emission-type semiconductor laser array for allowing high output and polarization control of a fundamental lateral mode light. <P>SOLUTION: A plane emission-type semiconductor laser array 10 includes: an element forming region 20 for forming a plurality of elements on a substrate; and a wiring forming region 30 for forming electrode wiring 50 and electrode pads 60. A plurality of mesas M1, M2 and M3 are formed in the element forming region 20 and metal wiring 70 is formed adjacently to the mesas M1, M2 and M3. The metal wiring 70 extends in parallel to an array direction of the mesas M1, M2 and M3, and anisotropic distortion in the same direction is added to active regions of the mesas M1, M2 and M3. <P>COPYRIGHT: (C)2013,JPO&INPIT |
