发明名称 N-TYPE DIFFUSION LAYER FORMATION COMPOSITION, MANUFACTURING METHOD OF N-TYPE DIFFUSION LAYER, AND MANUFACTURING METHOD OF SOLAR CELL ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide an n-type diffusion layer formation composition, a manufacturing method of an n-type diffusion layer, and a manufacturing method of a solar cell element capable of forming an n-type diffusion layer in a specific part without forming the n-type diffusion layer in an unnecessary region in a manufacturing step of a solar cell element using a silicon element and obtaining a sufficient ohmic contact by a simplified step. <P>SOLUTION: An n-type diffusion layer formation composition contains a glass powder including a donor element and a dispersion medium. An n-type diffusion layer and a solar cell element having this n-type diffusion layer are manufactured by coating this n-type diffusion layer formation composition on a semiconductor substrate and performing thermal diffusion treatment. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013026472(A) 申请公布日期 2013.02.04
申请号 JP20110160296 申请日期 2011.07.21
申请人 HITACHI CHEM CO LTD 发明人 ADACHI SHUICHIRO;YOSHIDA MASATO;NOJIRI TAKESHI;MACHII YOICHI;IWAMURO MITSUNORI;ODA AKIHIRO;SATO TETSUYA
分类号 H01L21/225;H01L31/04 主分类号 H01L21/225
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