发明名称 |
N-TYPE DIFFUSION LAYER FORMATION COMPOSITION, MANUFACTURING METHOD OF N-TYPE DIFFUSION LAYER, AND MANUFACTURING METHOD OF SOLAR CELL ELEMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an n-type diffusion layer formation composition, a manufacturing method of an n-type diffusion layer, and a manufacturing method of a solar cell element capable of forming an n-type diffusion layer in a specific part without forming the n-type diffusion layer in an unnecessary region in a manufacturing step of a solar cell element using a silicon element and obtaining a sufficient ohmic contact by a simplified step. <P>SOLUTION: An n-type diffusion layer formation composition contains a glass powder including a donor element and a dispersion medium. An n-type diffusion layer and a solar cell element having this n-type diffusion layer are manufactured by coating this n-type diffusion layer formation composition on a semiconductor substrate and performing thermal diffusion treatment. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013026472(A) |
申请公布日期 |
2013.02.04 |
申请号 |
JP20110160296 |
申请日期 |
2011.07.21 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
ADACHI SHUICHIRO;YOSHIDA MASATO;NOJIRI TAKESHI;MACHII YOICHI;IWAMURO MITSUNORI;ODA AKIHIRO;SATO TETSUYA |
分类号 |
H01L21/225;H01L31/04 |
主分类号 |
H01L21/225 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|