| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance photoelectric conversion efficiency of a photovoltaic device by controlling a bandgap. <P>SOLUTION: A photoelectric conversion device 100 includes an i-type layer 32 of amorphous silicon, in which a metal nitride layer 34 is bonded to a surface of the i-type layer 32 opposite to a light-receiving surface side, and has at least two different kinds of a work function. <P>COPYRIGHT: (C)2013,JPO&INPIT |
