发明名称 P-TYPE DIFFUSION LAYER FORMING COMPOSITION, MANUFACTURING METHOD OF P-TYPE DIFFUSION LAYER, AND MANUFACTURING METHOD OF SOLAR CELL ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a p-type diffusion layer forming composition, a manufacturing method of a p-type diffusion layer, and a manufacturing method of a solar cell element, capable of forming a p-type diffusion layer while suppressing roughening of a substrate surface, without generating internal stress of a silicon substrate and warpage of a substrate in a manufacturing process of a solar cell element using a semiconductor substrate. <P>SOLUTION: The p-type diffusion layer forming composition contains silicon particles, dispersion media, and glass powders containing acceptor elements. A p-type diffusion layer and a solar cell element having the same can be manufactured by coating the p-type diffusion layer forming composition and treating with thermal diffusion. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013026476(A) 申请公布日期 2013.02.04
申请号 JP20110160361 申请日期 2011.07.21
申请人 HITACHI CHEM CO LTD 发明人 ADACHI SHUICHIRO;YOSHIDA MASATO;NOJIRI TAKESHI;MACHII YOICHI;IWAMURO MITSUNORI;ODA AKIHIRO;SATO TETSUYA
分类号 H01L21/225;H01L21/316;H01L31/04 主分类号 H01L21/225
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