| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of determining a defective block caused by manufacturing variations. <P>SOLUTION: A semiconductor memory device comprises: a plurality of memory cells; a memory cell array that has a plurality of pages each of which includes the plurality of memory cells and blocks each of which includes the plurality of pages; a first storage section 63 that, when data is written into a first memory cell corresponding to a first column in each page, holds a first number of times of repeated program operation; a second a storage section 64 that, when the data is written into a second memory cell corresponding to a second column different from the first column in each page, holds a second number of times of the repeated program operation; and a controller 6 that, when a difference between the first number of times and the second number of times exceeds a specified value, registers a block that includes the first memory cell and the second memory cell as a defective block. <P>COPYRIGHT: (C)2013,JPO&INPIT |
