| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device that includes a nitride FET mounted on a lead frame and has excellent switching characteristics. <P>SOLUTION: A nitride semiconductor device includes a nitride FET and a lead frame including a plurality of leads. The nitride FET has at least a first main electrode, a second main electrode, and a control electrode. The lead frame has a first lead that is connected to the first main electrode, a second lead and a third lead that are connected to the second main electrode, and a fourth lead that is connected to the control electrode. The nitride FET passes a current between the first lead and the second lead according to a voltage applied between the third lead and the fourth lead. <P>COPYRIGHT: (C)2013,JPO&INPIT |
