| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element in which interdiffusion of atoms is suppressed between a semiconductor region and an electrode even when exposed to high temperature in the manufacturing process, and increase in the interfacial resistance is also suppressed, and to provide a manufacturing method of the semiconductor element. <P>SOLUTION: The semiconductor element includes a semiconductor region containing silicon, an electrode containing aluminum as a main component, and a diffusion prevention layer interposed between the semiconductor region and the electrode and containing germanium. Germanium content in at least a portion of the diffusion prevention layer is 4 atom% or higher. The manufacturing method of the semiconductor element includes the steps of: forming an aluminum alloy film containing germanium on the surface of the semiconductor region containing silicon; and performing heat treatment of the semiconductor region where the aluminum alloy film is formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
