| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor substrate capable of manufacturing a nitride semiconductor substrate having a flat surface without damaging the surface of the nitride semiconductor substrate. <P>SOLUTION: The manufacturing method of a nitride semiconductor substrate includes a step, by using a surface table having a surface formed of any one of Ni, Ti, Cr, W, Mo or a nitride of any one of these metals, of arranging the surface of the surface table and the surface of the nitride semiconductor substrate to be planarized closely with opposing each other, bringing the surface table and the nitride semiconductor substrate facing each other into a high temperature state of 900°C or higher, and then supplying a gas containing at least hydrogen and ammonium between the surface of the surface table and the surface of the nitride semiconductor substrate, to etch and planarize the surface of the nitride semiconductor substrate facing the surface table. <P>COPYRIGHT: (C)2013,JPO&INPIT |
