发明名称 PROTECTIVE DIODE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a protective diode having a small PN-junction capacitance and to provide a semiconductor device including the same. <P>SOLUTION: A protective diode includes: a semiconductor substrate having a first region, a second region surrounding the first region, and a third region surrounding the second region; a first insulating layer provided between the second region and the third region; a first-conductivity-type semiconductor provided in the third region; a second-conductivity-type semiconductor provided in the second region; and a capacitance relaxation layer provided in the first region. A semiconductor device includes: the protective diode; a first pad connected to the protective diode; a protective diode having a structure that does not have the capacitance relaxation layer; and the second pad connected to the protective diode having a structure that does not have the capacitance relaxation layer. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013026384(A) 申请公布日期 2013.02.04
申请号 JP20110158929 申请日期 2011.07.20
申请人 LAPIS SEMICONDUCTOR CO LTD 发明人 HIRAMA ATSUSHI;AZUMA MASAHIKO
分类号 H01L21/822;H01L27/04;H01L29/861;H01L29/868 主分类号 H01L21/822
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