发明名称 |
PROTECTIVE DIODE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a protective diode having a small PN-junction capacitance and to provide a semiconductor device including the same. <P>SOLUTION: A protective diode includes: a semiconductor substrate having a first region, a second region surrounding the first region, and a third region surrounding the second region; a first insulating layer provided between the second region and the third region; a first-conductivity-type semiconductor provided in the third region; a second-conductivity-type semiconductor provided in the second region; and a capacitance relaxation layer provided in the first region. A semiconductor device includes: the protective diode; a first pad connected to the protective diode; a protective diode having a structure that does not have the capacitance relaxation layer; and the second pad connected to the protective diode having a structure that does not have the capacitance relaxation layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013026384(A) |
申请公布日期 |
2013.02.04 |
申请号 |
JP20110158929 |
申请日期 |
2011.07.20 |
申请人 |
LAPIS SEMICONDUCTOR CO LTD |
发明人 |
HIRAMA ATSUSHI;AZUMA MASAHIKO |
分类号 |
H01L21/822;H01L27/04;H01L29/861;H01L29/868 |
主分类号 |
H01L21/822 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|