发明名称 MEMOIRE ET PROCEDE DE PROGRAMMATION DE CELLULES DE MEMOIRE
摘要 A memory includes a memory cell including a first terminal, a second terminal and a channel extending between the first terminal and the second terminal. The memory further includes an energy storage element configured to support a programming of the memory cell, the energy storage element being coupled to the first terminal, an energy supply coupled to the energy storage element, and a controller. The controller is configured to activate the energy supply and to bring the channel of the memory cell into a non-conductive state for energizing the energy storage element, and to subsequently bring the channel of the memory cell into a conductive state for programming the memory cell based on the energy stored in the energy storage element.
申请公布号 FR2978591(A1) 申请公布日期 2013.02.01
申请号 FR20120002102 申请日期 2012.07.25
申请人 INFINEON TECHNOLOGIES AG 发明人 NIRSCHL THOMAS;OTTERSTEDT JAN;SAVIGNAC DOMINIQUE;ALLERS WOLF
分类号 G11C7/12 主分类号 G11C7/12
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