Method for producing electrical connection in semiconductor substrate of integrated device in three-dimensional integrated structure, involves forming layer on part of carrier located between pillars to produce electrical connection

摘要

The method involves realizing a cavity in a carrier from a surface, and filling the cavity with electrically conductive material to obtain an electrically conductive pillar. The carrier is engraved from another surface opposite to the former surface to reach a bottom of the conductive pillar and form a silicon pillar. An electrically conductive layer (CC) projecting from the silicon pillar is formed on the bottom of the conductive pillar and on a part of the carrier located between the pillars to produce an electrical connection. Independent claims are also included for the following: (1) an integrated device (2) a three-dimensional (3D) integrated structure.