发明名称 Exhausting System for Single Crystal Grower and Single Crystal Grower including the same
摘要 PURPOSE: An exhausting system for a single crystal grower and a single crystal grower including the same are provided to automatically measure the degree of impurity deposition on an exhaust pipe by detecting the temperature of the exhaust pipe. CONSTITUTION: In an exhausting system for a single crystal grower and a single crystal grower including the same, a chamber(110) has a crucible. At least one exhaust pipe discharges impure gas from melt which is accepted into the crucible. At least one temperature sensor measures the temperature of the exhaust pipe. A controller controls the temperature sensor.
申请公布号 KR101229198(B1) 申请公布日期 2013.02.01
申请号 KR20100010318 申请日期 2010.02.04
申请人 发明人
分类号 C30B15/20;C30B29/06;H01L21/02 主分类号 C30B15/20
代理机构 代理人
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